记忆电阻器
电阻随机存取存储器
计算机科学
吸引子
拓扑(电路)
激活函数
双向联想存储器
电压
控制理论(社会学)
内容寻址存储器
人工神经网络
物理
电气工程
数学
人工智能
数学分析
工程类
量子力学
控制(管理)
作者
Yongxiang Li,Shiqing Wang,Yang Ke,Yuchao Yang,Zhong Sun
标识
DOI:10.1038/s41467-024-52132-9
摘要
Resistive memory devices feature drastic conductance change and fast switching dynamics. Particularly, nonvolatile bipolar switching events (set and reset) can be regarded as a unique nonlinear activation function characteristic of a hysteretic loop. Upon simultaneous activation of multiple rows in a crosspoint array, state change of one device may contribute to the conditional switching of others, suggesting an interactive network existing in the circuit. Here, we prove that a passive resistive switching circuit is essentially an attractor network, where the binary memory devices are artificial neurons while the pairwise voltage differences define an anti-symmetric weight matrix. An energy function is successfully constructed for this network, showing that every switching in the circuit would decrease the energy. Due to the nonvolatile hysteretic function, the energy change for bit flip in this network is thresholded, which is different from the classic Hopfield network. It allows more stable states stored in the circuit, thus representing a highly compact and efficient solution for associative memory. Network dynamics (towards stable states) and their modulations by external voltages have been demonstrated in experiment by 3-neuron and 4-neuron circuits.
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