电容
深能级瞬态光谱
二极管
材料科学
锗
光电子学
信号(编程语言)
电容器
瞬态(计算机编程)
电压
物理
硅
电极
计算机科学
操作系统
程序设计语言
量子力学
作者
Johan Lauwaert,Samira Khelifi,Koen Decock,M. Burgelman,Henk Vrielinck
摘要
The DLTS signal induced by a back contact barrier is studied both theoretically and through experiments on model circuits. A nonideal back contact is modeled either by a resistor and a capacitor, or by a germanium diode inversely polarized with respect to the junction diode. Depending on the back contact properties, this may result in a positive or negative capacitance transient. For these model circuits the capacitance transient time constants and amplitudes are studied as a function of voltage pulse height and compared with signals originating from emission and slow capture from a defect level. These two origins of DLTS signals present very different properties, which opens possibilities to distinguish between them.
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