材料科学
界面热阻
单层
二硫化钼
热导率
纳米技术
热阻
热的
聚合物
散热膏
化学物理
表面改性
电子设备和系统的热管理
热接触电导
传热
工作(物理)
共价键
表面工程
纳米电子学
接口(物质)
电导
纳米尺度
钼
密度泛函理论
自组装单层膜
光电子学
化学工程
晶体管
微电子
消散
复合材料
场效应晶体管
表征(材料科学)
纳米颗粒
作者
Yue Yue,Ruiwen Dai,Zexin Liu,Jian Huang,Kai Yang,Kangyong Li,Fan-fan Wang,Zhiqiang Wang,Dongdong Chen,Guoqing Xin
摘要
The integration of two-dimensional (2D) materials with polymeric substrates has gained significant attention in the field of flexible electronics. However, the fundamental understanding of thermal transport across 2D material–polymer interface remains insufficient, resulting in critical thermal management challenges for high-performance flexible devices. This work systematically investigates and enhances interfacial thermal transport at the molybdenum disulfide (MoS2)–polyimide (PI) interface through surface functionalization with NH2-terminated self-assembled monolayer (SAM). Significantly, the thermal boundary conductance at the modified interface demonstrates a 67% enhancement compared to the pristine system. Systemic characterization reveals that this improvement originates from synergistic effects, including the strengthened interfacial bonding through N–Mo covalent interactions and improved surface morphological compatibility. The reduced interfacial thermal resistance enables efficient heat dissipation in MoS2 devices, as demonstrated by 51% increase in maximum power density for SAM-modified MoS2 top-gate field-effect transistor compared to the conventional structures. These findings establish a materials engineering paradigm for interface thermal management in flexible electronics, providing both fundamental insights into nanoscale heat transfer mechanisms and practical strategies for developing high-power density flexible devices.
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