Organic/Inorganic Van Der Waals Heterojunction with Quasi‐Broken‐Gap Band Alignment for Both Visible and Infrared Photodetection

Abstract Integration of 2D organic and inorganic semiconductors can yield exceptional electronic and optoelectronic capabilities, however, most organic/inorganic heterojunctions reported presented type‐II staggered‐gap band alignment. In this work, for the first time, a 2D organic/inorganic F 16 CuPc/GeAs van der Waals heterojunction with quasi‐broken‐gap (QBG) band alignment is reported. From temperature‐dependent and gate‐dependent electrical measurements, the heterojunction exhibited direct electron tunneling characteristics. Moreover, the band alignment and charge transfer mechanism at the F 16 CuPc/GeAs hetero‐interface is explicitly revealed by gate‐voltage ( V g ) and source‐drain voltage ( V ds ) dependent Kelvin probe force microscopy (KPFM) measurements. Impressively, the heterojunction presented enhanced photodetection performance in both visible and infrared regimes due to the efficient charge transfer at the hetero‐interface, where the photoresponsivity ( R ) and Detectivity ( D *) are up to 110 A W −1 and 9.2 × 10 12 Jones for 532 nm and 19.1 A W −1 and 1.3×10 11 Jones for 1550 nm, respectively. The work provides a new platform to construct organic/inorganic van der Waals heterojunction for tunneling field effect transistors and phototransistors.