Statistical evaluation of grain boundaries of varistors with modified bismuth oxide

Abstract Oxide varistors are made of inhomogeneous material whose properties are determined by active grain boundaries. It is essential that in the microstructure of a varistor only active grain boundaries are present as only such boundaries are involved in the process of conduction. Commercial varistors are characterized by a microstructure with a large amount of electrically inactive areas which include zinc-antimony spinel, bismuth oxide, and pores. Studies on elimination of inactive grain boundaries, which are the intergranular areas rich in reaction products of varistor components and pores, lead to an improvement in the microstructure, thereby improving the electrical properties of the varistor. The results were evaluated using statistical methods, defining the percentage of active grain boundaries in the varistor. Statistical analysis showed that the best results were obtained for a bismuth oxide varistor doped with antimony oxide, containing nearly 100 % conductive grain boundaries in its body.