浅层供体
兴奋剂
电离
接受者
材料科学
电离能
合金
凝聚态物理
电荷(物理)
化学
光电子学
物理
离子
冶金
量子力学
有机化学
作者
Pegah Bagheri,Pramod Reddy,Seiji Mita,Dennis Szymanski,Ji Hyun Kim,Yan Guan,Dolar Khachariya,Andrew Klump,Spyridon Pavlidis,Ronny Kirste,Ramón Collazo,Zlatko Sitar
摘要
Contrary to the arsenides where donors undergo stable DX transition, we find that Ge in AlGaN does not suffer from the DX transition; instead, it undergoes a shallow donor (30 meV) to deep donor (150 meV) transition at ∼50% Al content in the alloy. This finding is of profound technological importance as it removes fundamental doping limitations in AlGaN and AlN imposed by the presumed DX−1 acceptor state. The charge state of Ge below and above the transition was determined by co-doping with Si, which remains a shallow donor in AlGaN for up to 80% Al. It was found that Ge occupied a donor state with a (0/+) thermodynamic transition for AlGaN alloys below and above the transition. Ge as a shallow donor was completely ionized at room temperature; however, the ionization of the deep donor required elevated temperatures, commensurate with its higher ionization energy. This behavior is not unique to Ge; preliminary findings show that Si and O in AlGaN may behave similarly.
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