波段图
材料科学
极化(电化学)
半导体
电子能带结构
凝聚态物理
带隙
化学
物理
光电子学
物理化学
作者
Jafar Hussain Shah,Biaohong Huang,Ahmed Mahmoud Idris,Yong Liu,Anum Malik,Weijin Hu,Zhidong Zhang,Hongxian Han,Can Li
出处
期刊:Small
[Wiley]
日期:2021-01-01
卷期号:17 (3)
被引量:4
标识
DOI:10.1002/smll.202007044
摘要
Small 2020, 16, 2003361 The authors regret that a wrong figure of Mott-Schottky (M-S) plot was used in Figure 1d for calculation of band structure in the above titled manuscript. In the manuscript, the flat-band potential was calculated roughly without considering the Y-axis at 0 position. Herein, we provide the correct version of Figure 1d with the flat band potential calculated for Y-axis starting from 0. The corresponding description in the Result and Discussions section is corrected as follows: “The Mott–Schottky plot in Figure 1d shows that BFO is a p-type semiconductor with flat band potential (Vfb) of ≈ 1.60 V vs normal hydrogen electrode (NHE). Hence, the valence band position of BFO can be estimated to be at ≈1.90 V Vs NHE (at pH = 6.5) since the VB of p-type semiconductor is usually ≈0.3 V more positive than that of Vfb.[32] Therefore, the conduction band position of BFO is determined to be at ≈-0.16 V vs NHE. The overall band structure diagram of BFO can be drawn as shown in the inset of Figure 1d. It can be seen that BFO is thermodynamically favorable for oxygen evolution reaction (OER) but unfavorable for hydrogen evolution reaction under visible light irradiation.” These corrections do not influence any of the experimental results and conclusions in the paper.
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