计算机科学
过程(计算)
贝叶斯优化
肖特基二极管
主动学习(机器学习)
遗传算法
功率(物理)
工艺优化
工作(物理)
二极管
人工智能
机器学习
材料科学
工程类
光电子学
物理
机械工程
环境工程
操作系统
量子力学
作者
Hayate Yamano,Alexander Kovacs,Johann Fischbacher,Katsunori Danno,Yusuke Umetani,Tetsuya Shoji,T. Schrefl
标识
DOI:10.35848/1347-4065/acb061
摘要
Abstract Low power-loss semiconductor devices are necessary to achieve a carbon-neutral society. The optimization of device structures is known as a time-consuming process. In this work, we investigated an optimization approach with the help of machine learning. We applied an active learning scheme to optimize a gallium oxide Schottky barrier diode structure and demonstrated how this approach helps to reduce the number of time-consuming simulations for the optimization process. For the investigated work, the active learning strategy almost reduced the number of simulations by a factor of 2 in contrast to the conventional genetic optimization. In addition, we also demonstrated that machine learning models can be used to estimate the performance variations caused by process variations. This approach can also contribute to reducing the number of simulations and speeding up the structure design process.
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