材料科学
单斜晶系
光致发光
纳米材料
半导体
纳米技术
镓
各向异性
光电子学
外延
碲化物
分子束外延
结晶学
光学
晶体结构
图层(电子)
冶金
化学
物理
作者
Hui Cai,Bin Chen,G Wang,Emmanuel Soignard,Afsaneh Khosravi,Marco Manca,X. Marie,Shery L. Y. Chang,B. Urbaszek,Sefaattin Tongay
标识
DOI:10.1002/adma.201605551
摘要
A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.
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