Ku‐band GaAs mHEMT MMIC and RF front‐end module for space applications

Abstract This article presents a Ku‐band Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) and RF front‐end module for space applications. LNA MMIC was developed with utilizing 0.07 μm GaAs m‐HEMT process. Noise Figure (NF) and gain results of LNA module were measured as 1.3 and 43 dB, respectively and OIP3 was measured as +20 dBm at the ambient temperature. The LNA module was tested in the temperature range between −25°C and 75°C and small signal gain and NF variation were less than 3 and 0.8 dB, respectively. This article describes the MMIC LNA design, mechanical chassis design, WR75 waveguide‐to‐microstrip design, and measurement results of the LNA front‐end module.