Growth of GaAs Crystal by an Improved VGF Apparatus

The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit and , which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient () and slower rates of post - growth cooling (). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.