响应度
量子隧道
光电子学
材料科学
接触电阻
光电二极管
半导体
电极
电子
电子迁移率
半导体器件
纳米技术
光电探测器
化学
物理
图层(电子)
物理化学
量子力学
作者
Lei Yin,Xueying Zhan,Kai Xu,Rui Wang,Zhenxing Wang,Yun Huang,Qisheng Wang,Chao Jiang,Jun He
摘要
Transition metal dichalcogenides (TMDs) demonstrate great potential in electronic and optoelectronic applications. However, the device performance remains limited because of the poor metal contact. Herein, we fabricate a high-performance ultrathin MoTe2 phototransistor. By introducing an electron tunneling mechanism, electron injection from electrode to channel is strikingly enhanced. The electron mobility approaches 25.2 cm2 V−1 s−1, better than that of other back-gated MoTe2 FETs. Through electrical measurements at various temperatures, the electron tunneling mechanism is further confirmed. The MoTe2 phototransistor exhibits very high responsivity up to 2560 A/W which is higher than that of most other TMDs. This work may provide guidance to reduce the contact resistance at metal-semiconductor junction and pave a pathway to develop high-performance optoelectronic devices in the future.
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