Boron Diffusion in Silicon

The diffusion of boron in silicon has been investigated by a p‐n junction method over the temperature range of 1050°–1350°C and in silicon material where the n‐type impurity density varied over a range . The diffusion coefficient was found to decrease gradually as the purity of the n‐type silicon increased. For silicon on the order of 0.1 ohm‐cm resistivity . The effect on the diffusion coefficient of both the bulk impurity density and the boron density in the surface region is discussed.