像素
CMOS芯片
晶体管
电压
计算机科学
电容器
电子工程
补偿(心理学)
阈值电压
电气工程
蒙特卡罗方法
频道(广播)
工程类
偏压
逻辑门
点间距
电子线路
集成电路
航程(航空)
对偶(语法数字)
图像传感器
计算机硬件
动态范围
作者
Litan Yan,Jianhua Zhang,Luqiao Yin,Aiying Guo
标识
DOI:10.1109/eiecs67708.2025.11283587
摘要
This paper presents a novel pixel circuit architecture for high-resolution silicon-based microdisplays with enhanced color depth. The proposed circuit employs a dual data voltage scheme and consists of seven field-effect transistors (FETs) and two capacitors (7T2C). A voltage programming technique is utilized to generate the requisite driving voltage from the two data voltages, enabling the driving transistor to produce the pixel currents. To address the challenges posed by threshold voltage ($V_{\text {th }}$) variations in the driving transistor, a compensation scheme is introduced, effectively mitigating their impact and enhancing display uniformity. Simulation results, based on a 55 nm CMOS process, demonstrate that the proposed pixel circuit achieves a 9-bit gray level resolution with dual data inputs. The compensated pixel current errors are observed to range from $-9.62 \%$ to $+8.83 \%$ under the FF Corner and SS Corner conditions. Furthermore, Monte Carlo simulations reveal a maximum pixel current variation of $6.03 \%$, indicating the circuit’s robust performance and practical viability.
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