聚酰亚胺
摩擦电效应
材料科学
Kapton
聚合物
均苯四甲酸二酐
聚偏氟乙烯
玻璃化转变
化学工程
纳米技术
高分子化学
复合材料
图层(电子)
工程类
作者
Zhen Pan,Shunqi Yuan,Xi Ren,Zhibin He,Zhenzhong Wang,Shujun Han,Yuexin Qi,Haifeng Yu,Jingang Liu
出处
期刊:Technologies (Basel)
[Multidisciplinary Digital Publishing Institute]
日期:2023-10-03
卷期号:11 (5): 136-136
被引量:9
标识
DOI:10.3390/technologies11050136
摘要
Nanotechnologies are being increasingly widely used in advanced energy fields. Triboelectric nanogenerators (TENGs) represent a class of new-type flexible energy-harvesting devices with promising application prospects in future human societies. As one of the most important parts of TENG devices, triboelectric materials play key roles in the achievement of high-efficiency power generation. Conventional polymer tribo-negative materials, such as polytetrafluoroethylene (PTFE), polyvinylidene difluoride (PVDF), and the standard polyimide (PI) film with the Kapton® trademark based on pyromellitic anhydride (PMDA) and 4,4′-oxydianiline (ODA), usually suffer from low output performance. In addition, the relationship between molecular structure and triboelectric properties remains a challenge in the search for novel triboelectric materials. In the current work, by incorporating functional groups of trifluoromethyl (–CF3) with strong electron withdrawal into the backbone, a series of fluorine-containing polyimide (FPI) negative friction layers have been designed and prepared. The derived FPI-1 (6FDA-6FODA), FPI-2 (6FDA-TFMB), and FPI-3 (6FDA-TFMDA) resins possessed good solubility in polar aprotic solvents, such as the N,N-dimethylacetamide (DMAc) and N-methyl-2-pyrrolidone (NMP). The PI films obtained via the solution-casting procedure showed glass transition temperatures (Tg) higher than 280 °C with differential scanning calorimetry (DSC) analyses. The TENG prototypes were successfully fabricated using the developed PI films as the tribo-negative layers. The electron-withdrawing trifluoromethyl (–CF3) units in the molecular backbones of the PI layers provided the devices with an apparently enhanced output performance. The FPI-3 (6FDA-TFMDA) layer-based TENG devices showcased an especially impressive open-circuit voltage and short-circuit current, measuring 277.8 V and 9.54 μA, respectively. These values were 4~5 times greater when compared to the TENGs manufactured using the readily accessible Kapton® film.
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