In2O3 decorated TiO2 for broadband photosensing applications

Abstract This paper presents the fabrication and broadband photosensing of bare TiO 2 and In 2 O 3 decorated TiO 2 based photodetectors. The photosensing properties of the In 2 O 3 decorated TiO 2 were compared with the bare TiO 2 . The proposed photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet to near-infrared wavelengths. The In 2 O 3 decorated TiO 2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio in the order of 4 × 10 3 , which is 10 3 times higher than the TiO 2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA W –1 and 4.97 × 10 12 Jones respectively. Moreover, In 2 O 3 decorated TiO 2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.