Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch

Plasma plays an important role in semiconductor processes. With the recent miniaturization and integration, the control of plasma became essential for success in the critical dimension of a few nanometers and etch narrow and deep holes with their high aspect ratios. Recently, the etching process has reached physical limitations due to a significant increase in wafer surface temperature under the elevated amount of RF power, affecting not only the warpage phenomenon, but also etching uniformity and etching profiles. Therefore, the plasma characteristics are identified using an invasive single Langmuir probe (SLP) for wafer temperature diagnosis. Optical data is obtained through a non-invasive optical emission spectroscopy (OES) and the plasma parameters are derived to compare and verify with the SLP. Two variables, electron temperature and electron density, are substituted for the heat flux formula to derive the heat flux according to the location. Using a wafer-type temperature sensor, the trends of the derived heat flux values towards wafer chuck were investigated. This study presents a method to calculate heat flux values in real time, anticipate wafer temperatures, and potentially illuminate existing ion heating problems.