Enhancing poly-Si contact through a highly conductive and ultra-thin TiN layer for high-efficiency passivating contact silicon solar cells

High-performance passivating contacts with excellent electron selective property is a prerequisite for silicon solar cells with high power conversion efficiency. In this work, a highly conductive, ultra-thin electron-selective titanium nitride (TiN) film is prepared by reactive magnetron sputtering for tunnel oxide passivated contact (TOPCon) solar cells. The deposition parameters, crystal structure, and chemical state were systematically investigated. A higher TiN content and stronger TiN (111) diffraction peak resulted in higher conductivity. We demonstrated that the TiN film possessed a conductivity as high as 5000 S/cm and a relatively low work function of 4.26 eV. An ultra-thin TiN film (1–2 nm) was inserted between the n+ poly-Si and rear electrode to reduce the interface contact resistance and interface barrier height and subsequently obtain better electron transport. The cross-sectional morphology and elemental distribution of the n+ poly-Si/TiN/Ag interface were tested using high-resolution transmission electron microscopy. The developed TiN film was a proof of concept, and it demonstrated an impressive cell efficiency of 24.6% (Voc = 707.1 mV, Jsc = 41.62 mA/cm2, FF = 83.7%) on TOPCon solar cells. Our work provides vital insights and a detailed supplement toward the optimization of electron contact for silicon solar cells or perovskite solar cells. The outcomes of the study indicate the potential for use in applications involving high fill factor photovoltaic devices.