材料科学
钙钛矿(结构)
钝化
光伏系统
化学工程
氧化物
光电子学
苯佐卡因
能量转换效率
氧化镍
图层(电子)
纳米技术
电气工程
冶金
工程类
免疫学
生物
作者
Z.Y Chen,Shuguang Cao,Shizi Luo,Lavrenty G. Gutsev,Xiaoli Chen,Victoria V. Ozerova,Nikita A. Emelianov,Nikita A. Slesarenko,Valeria S. Bolshakova,Yupeng Zheng,Zhuoneng Bi,С. М. Алдошин,Pavel A. Troshin,B. Ramachandran,G. L. Gutsev,Hsien‐Yi Hsu,Qifan Xue,Xueqing Xu
标识
DOI:10.1021/acsami.4c09850
摘要
) and fill factor (FF). Our results show that the photoelectric conversion efficiency (PCE) of p-i-n PSCs with nickel oxide as the hole transport layer increased from an initial 20.0% to 22.1% after being passivated with BHC, and these passivated devices also exhibited improved stability. DFT calculations reveal the unusual ability of the BHC passivant to improve band alignment while also preventing the accumulation of holes at the interface. In this work, the advantages of BHC passivation are demonstrated by linking theoretical calculations with optical and electrical characterizations.
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