Reconfiguration of nondestructively readable superconductor memory by direct injection of magnetic flux to storage loop

Abstract In this study, we demonstrate a novel method for the reconfiguration of a nondestructively readable memory cell for superconductor integrated circuits. The proposed reconfiguration method involves the direct injection of flux quantum to the storage loop of the memory cell, which has been achieved using interface circuits in previous studies. By applying this method, the footprint of the superconductor memory cell can be reduced by half. We experimentally demonstrate the proof-of-concept of the investigated reconfiguration method. We expect that the memory cell reconfigured using the proposed method will be suitable for building large-scale lookup tables using superconductor circuits.