High‐Resolution, Highly Transparent, and Efficient Quantum Dot Light‐Emitting Diodes

Abstract Aiming at next‐generation displays, high‐resolution quantum dot light‐emitting diodes (QLEDs) with high efficiency and transparency are highly desired. However, there is limited study involving the improvements of QLED pixel resolution, efficiency, and transparency simultaneously, which undoubtedly restricts the practical applications of QLED for next‐generation displays. Here, the strategy of electrostatic force‐induced deposition (EF‐ID) is proposed by introducing alternating polyethyleneimine (PEI) and fluorosilane patterns to synergistically improve the pixel accuracy and transmittance of QD patterns. More importantly, the leakage current induced by the void spaces between pixels that is usually reported for high‐resolution QLEDs is greatly suppressed by substrate‐assisted insulating fluorosilane patterns. Finally, high‐performance QLEDs with high resolution ranging from 1104 to 3031 pixels per inch (PPI) and a high efficiency of 15.6% are achieved, among the best performances of high resolution QLEDs. Notably, the high resolution QD pixels greatly enhance the transmittance of the QD patterns, thus prompting an impressive transmittance of 90.7% for the transparent QLEDs (2116 PPI), which represents the highest transmittance of transparent QLED devices. Consequently, this work contributes an effective and general approach for high‐resolution QLEDs with high efficiency and transparency.