Exploring Device Simulations for Achieving 27.15% Efficiency in MASnBr3-Based Solar Cells
计算机科学
材料科学
光电子学
环境科学
作者
Aniket Verma,Nikhil Shrivastav,Jaya Madan
标识
DOI:10.1109/gcat62922.2024.10924070
摘要
The use of perovskite materials has emerged as the leading contender in the field of research pertaining to the development of high-cost, large-scale solar cells. Perovskite materials-based organic and inorganic lead cells have recently attained impressive efficiency records. These cells have been used in electronics. Lead-based cells, on the other hand, involve stability issues as well as potential health risks. The purpose of this work is to investigate lead-free perovskite solar cells by employing the generic ABX3 formula and MASnBr3 as the simulated absorber layer during the experiment. The FTO/SnO2/MASnBr3/Cu2O/Au device architectural adjustment has resulted in an improvement in the attributes of the PV device. This endeavor is centered on lead-free perovskite materials as a potential solution to the stability problems and health risks that are associated with standard lead-based perovskite solar cells. The goal of this endeavor is to advance the area of solar energy research. This study has resulted in the optimization of the device FTO/SnO2/ MASnBr3/Cu2O/Au, which has enhanced PV characteristics such as open circuit voltage (VOC: 1.02 V), short circuit current density (JSC: 33.44 mA/cm2), fill factor (FF: 78.77%), and power conversion efficiency (PCE: 27.15%).