钻石
化学气相沉积
数码产品
薄脆饼
纳米技术
材料科学
可扩展性
工程物理
微波食品加热
计算机科学
电气工程
工程类
电信
冶金
数据库
作者
Sergey V. Baryshev,Matthias Muehle
标识
DOI:10.1109/tps.2023.3339338
摘要
Discovered and reported exactly 40 years ago, microwave plasma-assisted chemical vapor deposition (MPACVD) pointed out an economic technology that could potentially produce lab-grown diamond stones at scale. After this breakthrough discovery, demonstrating that diamond can be grown at low pressure and high temperature, the progress quickly curbed and synthetic single crystal diamond (SCD) size and quality could not be improved toward attaining requirements critical in solid-state electronics. This led to the early promise of MPACVD to not come true and slowed the level of investments, thereby further stalling the progress in diamond syntheses. With the invention of a few novel homoepitaxy and heteroepitaxy growth techniques, diamond research and technology has recently been reinvigorated. This mini-review attempts to capture the momentum of recent progress in diamond MPACVD that could finally bring scalable manufacturing of high-quality large-size wafers for future electronics and optics.
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