Ultrashort Channel MoSe2 Transistors with Selenium Atoms Replaced at the Interface: First-principles Quantum-transport Study

The realization of n- and p-type TMD-based field-effect transistors for nanoscale CMOS applications remains challenging owing to undesirable contact resistance. Quantum-transport calculations were performed by replacing single-sided of Se atoms of TMD near the interface with As or Br atoms to further improve the contact resistance. Here partial selenium replacement produced a novel interface with a segment of metamaterial MoSeX (Pt/MoSeX/MoSe2; X=As, Br). Such stable metamaterials exhibit semi-metallicity and the contact resistance can thus be lowered. Our findings provide insights into the potential of MoSe2-based nano-CMOS logic devices.