Ferroelectric Nanostructures: Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands (Adv. Funct. Mater. 32/2019)

In article number 1807276, Xingsen Gao and co-workers demonstrate the observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands in high-density arrays. A controllable writing of four distinctive domain wall conduction states for individual nano-islands can be achieved by applying various external bias voltages, showing a potential for implementation in multilevel high-density memories.