Effect of annealing temperature on construction of CuO layer on electrodeposited-Cu2O layer by annealing

We report the annealing effects on the morphological and structural properties of Cu 2 O films electrodeposited on Cu substrates from an aqueous solution containing copper acetate and lactic acid. The Cu 2 O/CuO layers has been constructed by electrodeposition of p-Cu 2 O layer on the modified surface of Cu substrate followed by formation of the CuO layer by annealing from 100°C to 300°C. The morphology and structural analysis was performed using optical microscope, AFM and XRD respectively. The result showed that increasing the annealing temperature resulted in the increment of the Cu 2 O grain size from about 96 to 201 nm. AFM reveals the precipitation of CuO grains on the Cu 2 O layer by annealing in air at 300°C, and completely covered the surface of Cu 2 O layer.