Low-temperature growth of graphene using interfacial catalysis of molten gallium and diluted methane chemical vapor deposition

Although the formation of graphene nuclei conventionally requires high temperature of ∼1050 °C in the first growth stage, the presence of the graphene nuclei allowed for low-temperature edge growth, and this peripheral area continued growing even when the temperature was reduced to 300 °C in the second growth stage. The graphene grown at the second stage was a single layer with fewer defects. The Raman map showed high homogeneity with a 2D/G ratio >2 over the entire contact area of molten gallium, and the hole mobility was 600 cm2 V−1 s−1.