量子点
纳米晶
材料科学
光电子学
量子产额
发光二极管
二极管
带隙
兴奋剂
镉
纳米技术
光学
荧光
物理
冶金
作者
Zhen Bao,Zhen-Feng Jiang,Qiang Su,Hsin-Di Chiu,Heesun Yang,Shuming Chen,Ren‐Jei Chung,Ru‐Shi Liu
出处
期刊:Nanoscale
[Royal Society of Chemistry]
日期:2020-01-01
卷期号:12 (21): 11556-11561
被引量:32
摘要
Cadmium-free quantum dots (QDs) are attracting considerable research attention because of their low toxicity. However, the bandgap of most cadmium-free QDs avoids the pure-blue region, which leads to difficulty in realizing pure-blue quantum-dot light-emitting diodes (QLEDs). In this work, we successfully tuned the emission wavelength of ZnSe/ZnS quantum dots from the violet region (∼420 nm) to the pure-blue region (450-460 nm) by doping Te into the ZnSe core. The ZnSe:0.03Te/ZnSeS/ZnS QD sample with emission at 450 nm and a quantum yield of 30% was the most balanced formula. To overcome the energy gap between the hole-transfer layer and QD layers, a specific hole-transfer layer was developed for normal-structure QLEDs. A QLED with such a structure with ZnSe:0.03Te/ZnSeS/ZnS QDs achieved the pure-blue light emission at 455 nm, a low turn-on voltage of 4.4 V, and an external quantum efficiency of 0.33%. Overall, our cadmium-free QLED achieved pure-blue emission, revealing the potential of ZnSe-based pure-blue QLEDs for future displays.
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