Photoluminescence properties of Er doped AS2S3 films deposited using RF co-sputtering and the impact of rapid thermal annealing

This work reports the photoluminescence (PL) properties of Er doped AS2S3 films (at 0.1 mol% concentration) fabricated by RF co-sputtering. As sputtered films are shown to exhibit PL degradation only on exposure to the combination of green light and water vapour due to photo-incorporation of OH groups through film nanostructural pores. Rapid Thermal Annealing is investigated as a possible remedy to this issue.