单层
兴奋剂
材料科学
掺杂剂
接受者
费米能级
分子束外延
电子
纳米技术
凝聚态物理
外延
光电子学
图层(电子)
量子力学
物理
作者
Yipu Xia,Junqiu Zhang,Zhoubin Yu,Yuhao Jin,Hao Tian,Yue Feng,Bin Li,Wingkin Ho,Chang Liu,Hu Xu,Chuanhong Jin,Maohai Xie
标识
DOI:10.1002/aelm.202070005
摘要
Phosphorous doping in a MoSe2 monolayer is achieved by co-deposition of P, Se, and Mo during molecular-beam epitaxy, as reported by Maohai Xie and co-workers in article number 1900830. P atoms substitute Se in MoSe2, acting as acceptors and causing a Fermi-level shift. The doping level can be tuned by changing the P/Se flux ratio. For dopants of the group-V elements, the binding energy becomes shallower with increasing atomic mass.
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