单层
晶体管
场效应晶体管
石墨烯
光电子学
电子
材料科学
量子隧道
电容
阈下斜率
电流密度
半导体
物理
纳米技术
电极
电压
量子力学
作者
Maomao Liu,Hemendra Nath Jaiswal,Sharifeh Shahi,Sichen Wei,Yu Fu,Carlin Chang,Anindita Chakravarty,Fei Yao,Huamin Li
标识
DOI:10.1109/iedm13553.2020.9371961
摘要
Two-dimensional (2D) semiconductors such as MoS 2 are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS 2 channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).
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