串扰
雪崩光电二极管
单光子雪崩二极管
光电探测器
CMOS芯片
探测器
光电子学
光电二极管
物理
光子
雪崩二极管
光学
电子工程
电气工程
工程类
电压
击穿电压
作者
Anna Vilà,E. Vilella Figueras,Oscar Alonso,Á. Diéguez
标识
DOI:10.1109/led.2013.2288983
摘要
Advances in single photon avalanche detector (SPAD) arrays propose improving the fill factor by confining several SPADs in the same well, with a main issue related to crosstalk. In applications that measure at fixed times, the pixels can be inhibited before the arrival of the crosstalk charge. This letter reports the crosstalk characterization in an array of SPADs, where the sensors share the same n-well (fill factor 67%), and fabricated in a conventional CMOS technology. The reduction of the gating time completely eliminates the crosstalk, as predicted by the theory and TCAD simulations.
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