量子点
纤锌矿晶体结构
极地的
电子
极化(电化学)
载流子
凝聚态物理
量子阱
材料科学
宽禁带半导体
量子
分子物理学
化学
光电子学
物理
光学
锌
物理化学
量子力学
激光器
天文
冶金
作者
Oliver Marquardt,Tilmann Hickel,Jörg Neugebauer
摘要
We have performed systematic studies of wurtzite GaN/AlN quantum dots grown on polar and nonpolar surfaces. For this purpose, experimentally observed quantum dot geometries have been employed within an eight-band k⋅p model. The spatial separation of electrons and holes due to polarization potentials is found to be much larger in nonpolar than in polar grown quantum dots. In order to improve the electron-hole overlap and thus the recombination rates, we have varied the shape, size, and the periodic arrangement of nonpolar quantum dots. We observed the strongest improvement of the charge carrier overlap in nonpolar quantum dots that have a reduced dimension. If the size is reduced below 60% of the dimensions reported recently in literature, this increase is clearly more pronounced than for the polar quantum dots, indicating much better recombination rates in smaller nonpolar quantum dots.
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