Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin

Heavily doped n-type InP and InGaAs epitaxial layers have been grown by metalorganic chemical vapor deposition at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn-doped InP and InGaAs layers have been grown with doping concentrations as high as n300K∼3.3×1019 cm−3 and n300 K∼6.1×1019 cm−3, respectively. Hall measurements of Nd-Na at 300 and 77 K indicate that the Sn is uncompensated up to these concentrations. Analysis of the Sn concentration in InP:Sn and InGaAs:Sn layers using secondary ion mass spectrometry, shows that all of the Sn is ionized in InP and InGaAs until a limit is reached that corresponds to the electrical limits. SIMS profiles also show that the use of TESn for the growth n+ InP and InGaAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.