Electrical resistivity of amorphous Ni80−xMxB16Si4 alloys

The electrical resistivity of amorphous Ni80−xMxB16Si4 alloys, M standing for any of the 3d transition metals, was studied in the temperature range ∼2–950 K. The resistivity versus M plots (at constant x) yield typical double-peaked curves, with a minimum at Mn. The origin of this resistivity behaviour is discussed. All the samples show a resistivity minimum, probably due to Kondo effect, at Tmin, which is strongly composition dependent. Negative temperature coefficients of resistivity found about room temperature for several alloys are the consequence of Tmin lying well above room temperature for those alloys.