Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources

Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were varied at a growth temperature of 600° C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300 K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.