氮族元素
双折射
砷化物
材料科学
光电子学
砷化镓
带隙
红外线的
锗化合物
功率(物理)
非线性光学
光功率
四面体
凝聚态物理
光学
光隔离器
结晶学
偏振器
纳米电子学
宽禁带半导体
非线性光学
作者
Hongshan Wang,Miriding Mutailipu,Shilie Pan,Junjie Li
摘要
ABSTRACT Arsenides represent an advantageous platform for designing long‐wavelength infrared (IR) nonlinear optical (NLO) materials; however, the intrinsic narrow bandgaps hinder their applications. In this work, by introducing As–As homoatomic bonds to eliminate the nonbonding electron pairs on As atoms, the first experimentally verified quaternary arsenide NLO material SrGa 3 Si 4 As 11 was rationally designed within the As‐rich A II –B III –C IV –As system, and synthesized experimentally. The compound crystallizes in the uniaxial hexagonal system ( P 6 3 space group, No. 173) and is composed of [SrAs 9 ] polyhedra, [GaAs 4 ] and [SiAs 4 ] tetrahedra with unique As–As homoatomic bonding. The introduction of As─As bonds simultaneously enhances the NLO response, bandgap, and birefringence, demonstrating a strong phase‐matching second‐order NLO response (∼8.0 × AgGaS 2 ), a wide arsenide bandgap (∼1.59 eV), a high laser‐induced damage threshold (∼1.5 × ZnGeP 2 and ∼4.0 × AgGaS 2 ) and a large birefringence (Δ n = 0.10@2090 nm) in the compound. Both experimental and theoretical results confirm the positive contributions of As─As bonds to these superior properties. The results enrich the structural diversity of arsenides, and establish As‐rich arsenides incorporating homoatomic bonds as an emerging system for high‐performance IR NLO materials, with SrGa 3 Si 4 As 11 serving as a promising candidate.
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