Driven by cloud computing, demand for high-capacity, high-bandwidth DRAM has surged. However, conventional planar DRAM scaling is approaching fundamental physical and economic limits, creating a critical memory wall bottleneck for Cloud development. Scaling trends and core technical challenges of advanced DRAM technologies were systematically reviewed. Furthermore, latest progresses of$\mathbf{4} \mathbf{F}^{\mathbf{2}}$vertical channel transistor (VCT) and stacked channel transistor (SCT) architectures, which are recognized as the most promising solutions to break through scaling limits were analyzed.