激光阈值
波导管
材料科学
光电子学
激光器
半导体激光器理论
光学
单模光纤
联轴节(管道)
GSM演进的增强数据速率
功率(物理)
辐射模式
半导体
物理
计算机科学
电信
波长
量子力学
冶金
作者
Enes Şeker,Serdar Şengül,Khalil Dadashi,Babak Olyaeefar,Abdullah Demir
摘要
The output power of a typical single-mode semiconductor laser is limited by its narrow waveguide width required to cut off high-order spatial modes. Conventional techniques rely on engineering the waveguide without introducing higherorder modes. In contrast, this work utilizes the concept of coupled-cavity (CC) structures. A single-mode lasing is achieved by employing a multi-mode and a neighboring single-mode waveguide. The CC approach is based on the resonant coupling of the high-order mode in the wide waveguide to the fundamental mode of a narrower lossy waveguide. First, geometrical dispersion of the CC lasers, such as their width, spacing, and their sensitivity to the resonance, was investigated. After optimizing the design, edge-emitting-lasers were fabricated using high-efficiency GaAs-based structures. Optical mode control and single-mode operation of the design are demonstrated through fundamental optical characterization measurements. The output power curves for the single and CC designs show similar slope efficiencies suggesting the proposed method as a promising approach towards high-power single lateral mode operation of edge-emitting lasers.
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