过电位
螺旋(铁路)
材料科学
热传导
GSM演进的增强数据速率
化学物理
凝聚态物理
纳米技术
化学
物理
复合材料
电极
电化学
物理化学
数学分析
数学
电信
计算机科学
作者
Xipeng Tong,Yang Zhao,Zhiwen Zhuo,Zhenhong Yang,Shuzhe Wang,Youwen Liu,Ning Lü,Huiqiao Li,Tianyou Zhai
出处
期刊:Angewandte Chemie
[Wiley]
日期:2021-12-06
卷期号:61 (7): e202112953-e202112953
被引量:58
标识
DOI:10.1002/anie.202112953
摘要
Abstract Insufficient active sites and weak vertical conduction are the intrinsic factors that restrict the electrocatalytic HER for transition‐metal dichalcogenides. As a prototype, we proposed a model of spiral MoTe 2 to optimize collectively the above issues. The conductive atomic force microscopy of an individual spiral reveals that the retentive vertical conduction irrespective of layer thickness benefits from the connected screw dislocation lines between interlayers. Theoretical calculations uncover that the regions near the edge step of the spiral structures more easily form Te vacancies and have lower ΔG H * as extra active sites. A single spiral MoTe 2 ‐based on‐chip microcell was fabricated to extract HER activity and achieved an ultrahigh current density of 3000 mA cm −2 at an overpotential of 0.4 V, which is about two orders of magnitude higher than the exfoliated counterpart. Profoundly, this unusual spiral model will initiate a new pathway for triggering other inert catalytic reactions.
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