Pressure-Induced Semiconductor-Metal Transitions in Amorphous Si, Ge and

Pressure‐induced semiconductor‐metal transitions have been found in amorphous Si, Ge and InSb at about 100, 60 and 12 kbar, respectively. The high‐pressure metallic modifications of Si remain amorphous, while those of Ge and InSb crystallize into cubic or tetragonal structure. The metallic character has been demonstrated by the superconductivity and the positive magnetoresistance.