CdS@SiO2Core-Shell Electroluminescent Nanorod Arrays Based on a Metal-Insulator-Semiconductor Structure

Enormous advancement has been achieved in the field of one-dimensional (1D) semiconductor light-emitting devices (LEDs), however, LEDs based on 1D CdS nanostructures have been rarely reported. The fabrication of CdS@SiO2 core-shell nanorod array LEDs based on a Au-SiO2 -CdS metal-insulator-semiconductor (MIS) structure is presented. The MIS LEDs exhibit strong yellow emission with a low threshold voltage of 2.7 V. Electroluminescence with a broad emission ranging from 450 nm to 800 nm and a shoulder peak at 700 nm is observed, which is related to the defects and surface states of the CdS nanorods. The influence of the SiO2 shell thickness on the electroluminescence intensity is systematically investigated. The devices have a high light-emitting spatial resolution of 1.5 μm and maintain an excellent emission property even after shelving at room temperature for at least three months. Moreover, the fabrication process is simple and cost effective and the MIS device could be fabricated on a flexible substrate, which holds great potential for application as a flexible light source. This prototype is expected to open up a new route towards the development of large-scale light-emitting devices with excellent attributes, such as high resolution, low cost, and good stability.