Development and Demonstration of a Novel Immersion Two Phase Cooling High Power SiC Power Module

In this study, we propose a lead frame based half-bridge power module equipped with SiC power devices aimed for automotive applications. This suggested power module is directly integrated with the cooling chamber/enclosure, forming an immersion two phase cooling power module. unlike the commonly used power modules, which are constructed on standard direct bonded copper (DBC) substrates. For the power module demonstrated in this study, the DBC substrate is taken away and a dedicated copper lead frame is engaged to form the interconnections from the drain side. Moreover, the high loop bond-wire interconnections for the source/gate pads are abolished, and another piece of copper lead frame is utilized to form the interconnections from the source/gates side. Then, the lead frames assembled with the SiC MOSFETs are directly integrated with a cooling chamber to form an enclosure for filling with the dielectric coolant for direct immersion cooling. The power module developed and demonstrated in this study is with light weight and thin structure by withdrawing the DBC and bonding wires. Furthermore, the cooling efficiency of the developed power module is improved significantly by employing the direct device level immersion cooling technology. It comes about 60% of size reduction and 100% of heat dissipation capability improvement as compared with the regular Double-side-cooling (DSC) power modules.