Insights into Interfacial Mechanism of CeO2/Silicon and Atomic-Scale Removal Process during Chemo-Mechanical Grinding of Silicon

/silicon interface during CMG, and the newly formed chemical bonds were stronger than those on the silicon surface. Also, it was found that the pressure and speed improved the materials removal rate by means of accelerating the interfacial chemical reactions, which is also verified by frictional wear tests. This study provides new insights into the atomic interfacial mechanism during silicon CMG.