Tuning Band Alignment at Grain Boundaries for Efficiency Enhancement in Cu2ZnSnS4 Solar Cells

Conducting atomic force microscopy has been performed for a fundamental understanding of the mechanism responsible for the lower power conversion efficiency (PCE) of Cu2ZnSnS4 (CZTS) solar cells than that of CuIn1-xGaxSe2 (CIGS) solar cells. The difference in efficiency is partly attributed to the distinctly different band alignment between the grain boundaries (GBs) and grain interior (GI) for the two materials. While CIGS shows type-II band alignment, CZTS was discovered to demonstrate type-I band alignment with the conduction band shifting downward while the valence band shifting upward at the GBs. The type-I band alignment in CZTS leads to both electron and hole trapping, enhancing their recombination, and lowers the PEC. Band engineering was realized by moderate oxidative annealing of CZTS. The preferential GB oxidation changes the band alignment into inverse type-I (i.e., the conduction band upward bending and valence band downward bending at GBs). The blocking of carrier recombination at GBs leads to 30% enhancement in PCE. Our work reveals the critical role that band alignment between the grain boundary and interior plays in polycrystalline thin film solar cells and suggests band alignment engineering as a practical approach to enhance PCE. Furthermore, conducting AFM has been shown to be a powerful tool for qualitative and semiquantitative characterization of band alignment in polycrystalline films.