材料科学
六方氮化硼
光电子学
电阻随机存取存储器
电介质
可靠性(半导体)
溅射沉积
氮化硼
薄膜
氮化物
非易失性存储器
电阻式触摸屏
溅射
纳米技术
电压
计算机科学
电气工程
图层(电子)
石墨烯
工程类
功率(物理)
物理
量子力学
计算机视觉
作者
Yue Jiang,Yong Huang,Shengli Zhang
标识
DOI:10.1016/j.cap.2022.10.002
摘要
Hexagonal boron nitride (hBN), due to its high reliability as a two-dimensional (2D) dielectric material, has attracted much attention for its potential applications in nanoelectronic devices. Here, the use of radio frequency (RF) magnetron sputtering-grown hBN films to construct hBN-based resistive switching (RS) memory device is reported, and the RS mechanism is deduced. The hBN-based RS memory shows low operating voltage, reproducible write cycles, and long retention time. First-principles simulations further confirm the resistive switching. This work provides an important case to facilitate the future applications of 2D materials in the RS memory.
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