石墨烯
材料科学
化学气相沉积
热导率
拉曼光谱
快速热处理
铜
数码产品
电子设备和系统的热管理
热的
化学工程
纳米技术
分析化学(期刊)
复合材料
光电子学
硅
热力学
光学
有机化学
冶金
物理化学
化学
机械工程
工程类
物理
作者
Satendra Kumar,Manoj Goswami,Netrapal Singh,Uday Deshpande,Satendra Kumar,N. Sathish
标识
DOI:10.1016/s1872-5805(23)60737-1
摘要
Next-generation consumer electronics require excellent thermal management. Graphene is a good choice because its thermal conductivity is 13 times that of copper. Single-, bi- and few-layer graphene (SLG, BLG, FLG) with large sp2 domains were grown by rapid thermal processing chemical vapor deposition (RTP-CVD) from CH4 and H2 using Ar as the diluting gas. The quality of graphene was investigated by Raman spectroscopy and TEM. To demonstrate the heat dissipation capability of RTP-CVD-grown graphene, a 2 TB solid state drive was used and the temperature was measured by a FLIR thermal camera. Results indicate that high thermal conductivity graphene was prepared by diluting the precursor gas with Ar. SLG was prepared at a growth temperature of 1 000 °C and a time of 25 min. A transition from FLG to high-quality BLG was observed at low H2 concentrations. Using SLG, there was a 5 °C lower temperature rise than using a commercial copper heat dissipator. The heat dissipation ability of SLG was approximately 200 times that of commercial copper heat dissipators.
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