手机
dBc公司
放大器
多尔蒂放大器
电气工程
异质结双极晶体管
功率(物理)
高电子迁移率晶体管
电子工程
材料科学
工程类
射频功率放大器
物理
晶体管
相位噪声
CMOS芯片
电压
量子力学
双极结晶体管
作者
Kiichiro Takenaka,Yuuma Noguchi,Satoshi Arayashiki,Takaya Wada
标识
DOI:10.23919/apmc55665.2022.9999751
摘要
In this paper, new multiband Doherty power am-plifier design for 5G NR Sub-6 GHz handset applications is proposed. The proposed Doherty power amplifier is demonstrated experimentally with GaAs-HBT. A PAE of 38.9% and a NR ACLR of -37.8 dBc at an average output power of 27.4 dBm are measured at 3.75 GHz under 5G NR 100 MHz, DFT-s-OFDM, QPSK operation. Moreover, the proposed Doherty power amplifier maintains more than 34.0% efficiency with a NR ACLR of below -35.6 dBc from 3.35 GHz to 5.15 GHz, corresponding to 5G NR Band n77 and Band n79.
科研通智能强力驱动
Strongly Powered by AbleSci AI