A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance

A novel Schottky barrier diode (SBD) integrated Silicon carbide (SiC) asymmetric MOSFET structure is proposed in this paper. The proposed SiC MOSFET allows the integration of a Schottky barrier diode without requiring additional chip area. This design circumvents performance degradation issues arising from the bipolar degradation effect, which occurs due to the accumulation of stacking layer errors in the drift region during the conduction of the body PN diode in conventional SiC MOSFETs. Moreover, the knee voltage of the integrated SBD in the proposed structure is only one-third of body diode in the conventional structure, resulting in an enhanced performance in the third quadrant of the SiC MOSFET.