Towards compact phase-matched and waveguided nonlinear optics in atomically layered semiconductors

二次谐波产生 非线性光学 材料科学 铌酸锂 光子学 光学 光电子学 非线性系统 波导管 双折射 单层 各向异性 物理 纳米技术 量子力学 激光器
作者
Xinyi Xu,Chiara Trovatello,Fabian Mooshammer,Yinming Shao,Shuai Zhang,Kaiyuan Yao,D. N. Basov,Giulio Cerullo,P. James Schuck
出处
期刊:Nature Photonics [Nature Portfolio]
卷期号:16 (10): 698-706 被引量:111
标识
DOI:10.1038/s41566-022-01053-4
摘要

Nonlinear frequency conversion provides essential tools for light generation, photon entanglement, and manipulation. Transition metal dichalcogenides (TMDs) possess huge nonlinear susceptibilities and 3R-stacked TMD crystals further combine broken inversion symmetry and aligned layering, representing ideal candidates to boost the nonlinear optical gain with minimal footprint. Here, we report on the efficient frequency conversion of 3R-MoS2, revealing the evolution of its exceptional second-order nonlinear processes along the ordinary (in-plane) and extraordinary (out-of-plane) directions. By measuring second harmonic generation (SHG) of 3R-MoS2 with various thickness - from monolayer (~0.65 nm) to bulk (~1 {\mu}m) - we present the first measurement of the in-plane SHG coherence length (~530 nm) at 1520 nm and achieve record nonlinear optical enhancement from a van der Waals material, >10^4 stronger than a monolayer. It is found that 3R-MoS2 slabs exhibit similar conversion efficiencies of lithium niobate, but within propagation lengths >100-fold shorter at telecom wavelengths. Furthermore, along the extraordinary axis, we achieve broadly tunable SHG from 3R-MoS2 in a waveguide geometry, revealing the coherence length in such structure for the first time. We characterize the full refractive index spectrum and quantify both birefringence components in anisotropic 3R-MoS2 crystals with near-field nano-imaging. Empowered with these data we assess the intrinsic limits of the conversion efficiency and nonlinear optical processes in 3R-MoS2 attainable in waveguide geometries. Our analysis highlights the potential of 3R-stacked TMDs for integrated photonics, providing critical parameters for designing highly efficient on-chip nonlinear optical devices including periodically poled structures, resonators, compact optical parametric oscillators and amplifiers, and optical quantum circuits.
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